Tuning the threshold voltage of MoS2field-effect transistors via surface treatment

Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment.

Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respective...

Tuning the threshold voltage in electrolyte-gated organic field-effect transistors.

Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal i...

Modulating the threshold voltage of oxide nanowire field-effect transistors by Ga ion beam

Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors.

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

We have studied experimentally the effect of ambient temperature on performance of the surface-passivated Al0.2Ga0.8N/GaN heterostructure field-effect transistors in the temperature range from 25°C to 250°C. The measured data have been compared with physics-based modeling of the GaN transistor characteristics under different ambient temperatures. The experimental data, showing about 33% degrada...